Sapphire Crystal Growth furnance KY Kyropoulos method 90-400kg for sapphire manufacture
KY Sapphire Crystal Growth furnance's abstract
This Sapphire Crystal Growth furnance system is designed for the production of high-quality sapphire crystals with a weight range of 90-400 kg, primarily utilized in LED substrates, smartphone screens, and smartphone camera lenses. The process is highly automated and incorporates adaptive software for optimal performance. It employs resistive heating in a vacuum atmosphere with a residual pressure of 2 × 10⁻⁶ Torr. The system requires a space of 10 square meters and operates at a power range of 40-100 kW. Sapphire Crystal Growth furnance the technological stages include loading the crucible, pumping out the working volume to 6 × 10⁻⁵ Torr, heating raw materials to 2100°C for melting, seeding the crystal, and gradually decreasing the power at a controlled rate. The equipment’s capacity to produce large, high-quality sapphire crystals makes it ideal for various industrial applications in optoelectronics and consumer electronics.
ZMSH KY Sapphire Crystal Growth furnance's Growth Process
Raw Material Preparation:
High-purity alumina (Al₂O₃) is used, with optional additives like lithium or sodium.
Loading the Crucible:
Raw materials are placed into a crucible made of high-temperature resistant material.
Heating:
The crucible is heated to around 2050°C, melting the alumina into a liquid.
Seeding:
A sapphire seed crystal is inserted into the molten alumina to guide crystal growth.
Crystal Growth:
The molten alumina slowly cools, allowing the sapphire crystal to grow from the seed.
Cooling:
The system gradually cools to solidify the crystal, with controlled cooling rates to prevent defects.
Crystal Removal:
The sapphire crystal is extracted and further processed.
Post-Growth Treatment:
The crystal is polished and tested for quality to meet application standards.
ZMSH KY Sapphire Crystal Growth furnance's data sheet(partly)
| Specification | Details |
| Sapphire crystals weight (kg) | 90-300 |
| High automation of the process | Yes |
| Special adaptive software | Yes |
| Heating type | Resistive heating |
| Working atmosphere | Vacuum |
| Vacuum (Torr) | 2 × 10⁻⁶ |
| Area required (sq. m) | 10 |
| Weight (kg) | 2300 |
| Power (kW) | 40 - 100 |
| Technological stages | 1. Loading crucible |
| | 2. Pumping out working volume to 6 × 10⁻⁵ Torr residual pressure |
| | 3. Heating raw materials to 2100°C and melting |
| | 4. Seeding |
| | 5. Decreasing power at a given speed |
| Sapphire crystal applications | LED substrate |
| | Smartphones screens |
| | Smartphone camera lenses |
ZMSH KY Sapphire Crystal Growth furnance at Customer's Factory
Crystal Growth Quality of ZMSH KY Sapphire Crystal Growth Furnace
The ZMSH KY Sapphire Crystal Growth Furnace is designed to optimize the quality of sapphire crystals through precise process control, advanced thermal field design, and high-purity material selection. The following are the key advantages of the sapphire crystals produced using this furnace:
High Crystal Purity
- The ZMSH furnace ensures minimal contamination by using high-purity raw materials and an optimized vacuum/inert gas atmosphere.
- Advanced crucible materials (such as high-purity tungsten or iridium) help reduce impurity incorporation during the growth process.
Excellent Optical Quality
- The grown sapphire crystals exhibit high optical transmittance, especially in the ultraviolet (UV) and infrared (IR) spectrum, making them ideal for optical applications.
- The uniform crystal structure minimizes light scattering and absorption, ensuring superior performance in LED, laser, and optical window applications.
Low Dislocation Density
- The optimized thermal gradient control in the ZMSH KY furnace reduces thermal stress, resulting in a low dislocation density and fewer internal defects.
- This is crucial for high-performance applications such as semiconductor substrates and high-end optical components.
Large and Uniform Crystal Size
- The furnace supports the production of large-diameter sapphire boules, allowing for efficient wafer slicing and minimal material waste.
- The axial and radial uniformity of the grown crystals ensures consistent properties across the entire boule.
Superior Mechanical Strength
- The sapphire crystals exhibit high hardness and excellent mechanical stability, making them highly resistant to scratching and mechanical damage.
- These properties are essential for demanding applications like smartphone screens, watch covers, and aerospace optics.
Stable and Repeatable Growth Process
- The advanced control system in the ZMSH KY furnace enables precise temperature and growth rate regulation, ensuring repeatability and consistent crystal quality.
- The automation features reduce human error, leading to high production yield and fewer defective crystals.
Optimized Stress Control to Minimize Cracks
- Sapphire Crystal Growth furnanceis designed to optimize the thermal stress distribution, reducing the likelihood of cracks or structural deformations in the final crystal.
- This enhances the processing efficiency of downstream wafer slicing and polishing operations.
Q&A
What are the key advantages of sapphire crystals grown using the ZMSH KY furnace?
✅ High purity with minimal impurities
✅ Excellent optical transparency in UV, visible, and IR ranges
✅ Low dislocation density for semiconductor applications
✅ Large and uniform crystal size
✅ High mechanical strength and scratch resistance
✅ Optimized stress control to reduce cracks
What quality control measures are in place during the crystal growth process?
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