Home > Gallium Nitride Wafer >

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

Product Categories

Sapphire Substrate [89]
Synthetic Gem Stone [75]
Sapphire Optical Windows [86]
Silicon Carbide Wafer [104]
Sapphire Tube [62]
Gallium Nitride Wafer [25]
Semiconductor Substrate [103]
Scientific Lab Equipment [50]
Sapphire Crystal Watch Case [19]
Wafer Carrier Box [14]
Superconducting Thin Monocrystalline Substrate [13]
Ceramic Parts [7]

SHANGHAI FAMOUS TRADE CO.,LTD

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

Name: 2quot Sapphire Based GaN Templates Semiconductor Substrate GaNOnSiC
Brand: ZMKJ
Price: 1 USD

China 2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC wholesale

Brand Name : ZMKJ

Model Number : 4inch GaN-sapphire

Place of Origin : China

MOQ : 2pcs

Price : by case

Payment Terms : T/T, Western Union, paypal

Supply Ability : 50pcs/month

Delivery Time : in 20days

Packaging Details : single wafer container in cleaning room

substrate : GaN-On-Sapphire

layer : GaN template

layer thickness : 1-5um

conductivity type : N/P

Orientation : 0001

application : high power/high frequency electronic devices

application 2 : 5G saw/BAW Devices

silicon thickness : 525um/625um/725um

Contact Now

2inch 4inch 4" 2'' Sapphire based GaN templates GaN film on the sapphire substrate GaN-On-Sapphire GaN wafers GaN substrates GaN windows

Properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.
2)Dissolved in a hot alkaline solution at a very slow rate.
3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of GaN, can be used for these poor quality GaN crystal defect detection.
4) GaN in the HCL or hydrogen, at high temperature presents unstable characteristics.
5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical Properties Of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.

Main Usage Of GaN

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

Specification

2 inch Blue/Green LED Epi. On Sapphire
Substrate	Type		Flat Sapphire
	Polish		Single side polished (SSP) / Double side polished (DSP)
	Dimension		100 ± 0.2 mm
	Orientation		C plane (0001) off angle toward M-axis 0.2 ± 0.1°
	Thickness		650 ± 25 μm
Epilayer	Structure (ultra-low current design)		0.2μm pGaN/0.5μm MQWs/2.5μm nGaN/2.0μm uGaN
	Thickness/std		5.5 ± 0.5μm/ <3%
	Roughness (Ra)		<0.5 nm
	Wavelength/std		Blue LED		Green LED
			465 ± 10 nm/ < 1.5nm		525 ± 10 nm/ <2.0 nm
	Wavelength FWHMs		< 20 nm		< 35 nm
	Dislocation density		< 5×10^8 cm-²
	Particles (>20μm)		< 4 pcs
	Bow		< 50 μm
Chip Performance (Based on your chip technology, here for reference,size<100μm)	Parameter	Peak EQE	Vfin@1μA	Vr@-10μA	Ir@-15V	ESDHM@2KV
	Blue LED	> 30%	2.3-2.5V	> 40V	< 0.08μA	> 95%
	Green LED	> 20%	2.2-2.4V	> 25V	< 0.1μA	> 95%
Useable Area	> 90% (edge and macro defects exclusion)
Package	Packaged in a cleanroom in a single wafer container

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

Crystal structure	Wurtzite
Lattice constant (Å)	a=3.112, c=4.982
Conduction band type	Direct bandgap
Density (g/cm3)	3.23
Surface microhardness (Knoop test)	800
Melting point (℃)	2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)	320
Band gap energy (eV)	6.28
Electron mobility (V·s/cm2)	1100
Electric breakdown field (MV/cm)	11.7

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

Product Tags: